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Current Releases
See the Easy-RSAs online help for the latest versions.
Each spring, farmers and other gardeners alike discover that the wide variety of seeds and plants that grow in the soggy fields and marshes can be easily transported with ease and minimal damage by using seed packets or seed baskets to hold the seeds and plants together. However, current seed packaging material does not provide much protection of the plants or seeds during shipment and storage in the field. Accordingly, there is a need for a container system that can be used for seed and plant transportation, as well as for seed storage that can protect the plants from damage while they are being stored and transported. In addition, there is a need for a seed container system that can easily and quickly be erected and taken down.This invention relates generally to the fabrication of semiconductor devices, and more specifically to the formation of shallow trench isolations in a semiconductor substrate.
Device isolation structures in semiconductor substrates are used to physically and electrically separate devices formed in the substrate. Typically, device isolation structures are formed by etching trenches in the substrate, which is typically a silicon substrate. Polysilicon is then deposited in the trenches and subsequently converted to a silicon oxide material, e.g., by a high temperature oxidation step. The resulting oxide liner is densified and partially recessed by the application of heat, after which the oxide liner is refilled with an insulating material, such as a spin-on-dielectric (SOD) material.
In forming shallow trench isolation (STI) regions, the SOD material and the oxide liner typically require a high temperature bake (i.e., to drive off residual solvent) to ensure adequate bonding of the materials. Unfortunately, during this high temperature bake, the liner in the STI region is significantly affected, which may lead to loss of its function.
The present invention is directed to overcoming one or more of the problems set forth above.
In one aspect of the present invention, a method of forming a shallow trench isolation region is provided. The
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